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Samsung M474A2K43DB1-CWE memory module 16 GB 1 x 16 GB DDR4 3200 MHz ECC
16 GB, DDR4, 262-pin, ECC SODIMM, 3200 MHz
Error correction code UDIMM / SODIMM Single error correction and detection available Supports x8 up to 2 ranks per DIMM Application : High-end desktop, High-end laptop, Server
More Information
SKU
M474A2K43DB1-CWE
Specification
Power Memory voltage 1.2 V Technical details Chips organisation 2Rx8 Memory Buffered memory type Unregistered (unbuffered) Memory layout (modules x size) 1 x 16 GB Internal memory 16 GB Component for PC/Server Memory form factor 260-pin SO-DIMM Memory voltage 1.2 V Module configuration 1024M x 8 ECC Yes Memory clock speed 3200 MHz Internal memory type DDR4 Features Buffered memory type Unregistered (unbuffered) Memory layout (modules x size) 1 x 16 GB Internal memory 16 GB Component for PC/Server Memory form factor 260-pin SO-DIMM Memory voltage 1.2 V Module configuration 1024M x 8 ECC Yes Memory clock speed 3200 MHz Internal memory type DDR4 Other features Chips organisation 2Rx8
Manufacturer
Samsung
In Stock
Y
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